Extreme Ultraviolet Lithography: Towards the Next Generation of Integrated Circuits
Optics & Photonics Focus
Volume 7 Story 4 - 4/11/2009

Section of a Bragg Mirror for EUVL

Transmission electron microscope (TEM) image of a Mo/Si multilayer cross section. Such materials are employed to produce Bragg mirrors that reflect EUV light.
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Section of a Bragg Mirror for EUVL. Transmission electron microscope (TEM) image of a Mo/Si multilayer cross section. Such materials are employed to produce Bragg mirrors that reflect EUV light.